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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD204 * DESCRIPTION *With TO-220C package *Low saturation voltage *Complement to type BD203 *Wide area of safe operation APPLICATIONS *For medium power switching and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -8 -12 -3 60 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD204 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Base-emitter on voltage CONDITIONS IC=-0.2A ;IB=0 IC=-1mA ; IE=0 IE=-1mA ; IC=0 IC=-3A; IB=-0.3A IC=-6A; IB=-0.6A IC=-6A; IB=-0.6A VCE=-30V ;IB=0; VCB=-40V ;IE=0;Tj=150 VEB=-5V; IC=0 IC=-2A ; VCE=-2V IC=-0.3A ; VCE=-3V IC=-3A;VCE=-2V 30 7.0 -1.5 MHz V MIN -60 -60 -5 -1.0 -1.5 -2.0 -0.2 -1.0 -0.5 TYP. MAX UNIT V V V V V V mA mA mA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE fT VBE 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD204 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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